AO4498 30v n-channel mosfet general description product summary v ds (v) = 30v i d = 18a (v gs = 10v) r ds(on) < 5.5m w (v gs = 10v) (v gs = 4.5v) 100% uis tested 100% rg tested symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 31 40 59 75 r q jl 16 24 avalanche current c 42 a repetitive avalanche energy l=0.1mh c 88 mj maximum junction-to-lead steady-state c/w steady-state c/w maximum junction-to-ambient a d power dissipation b p d w 3.1 a i d 18 14 maximum units parameter absolute maximum ratings t a =25c unless otherwise noted the AO4498 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. vv 20 gate-source voltage drain-source voltage 30 t 10s c/w parameter r q ja units maximum junction-to-ambient a junction and storage temperature range -55 to 150 c thermal characteristics r ds(on) < 7.5m w t c =25c 2 t c =70c 140 pulsed drain current c continuous drain current t c =25c t c =70c soic-8 top view bottom view d d d d s s s g g ds alpha & omega semiconductor, ltd. www.aosmd.com
AO4498 symbol min typ max units bv dss 30 36.5 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.3 1.8 2.5 v i d(on) 140 a 4.6 5.5 t j =125c 6.6 8 6 7.5 m w g fs 53 s v sd 0.7 1 v i s 4 a c iss 1910 2300 pf c oss 316 pf c rss 227 pf r g 0.7 1.4 2.1 w q g (10v) 37 44.5 nc q g (4.5v) 18 nc q gs 4.8 nc q gd 11 nc t d(on) 8.1 ns t r 8.6 ns t d(off) 29 ns t f 8 ns t rr 14 17 ns q rr 40 nc rev 1 : nov. 2010 components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =18a reverse transfer capacitance i f =18a, di/dt=500a/ m s v gs =0v, v ds =15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =18a v gs =4.5v, i d =16a gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =15v, i d =18a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =18a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.83 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. alpha & omega semiconductor, ltd. www.aosmd.com
AO4498 typical electrical and thermal characteristics 17 52 10 0 18 40 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 0 2 4 6 8 10 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =16a v gs =10v i d =18a 0 2 4 6 8 10 12 14 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125 c v ds =5v v gs =4.5v v gs =10v i d =18a 25c 125c 0 20 40 60 80 100 120 140 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3.5v 4v 5v 6v 10v 4.5v alpha & omega semiconductor, ltd. www.aosmd.com
AO4498 typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =15v i d =18a 0.0 0.1 1.0 10.0 100.0 1000.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to-am bient (note f) power (w) t j(max) =150c t a =25c 100ms 10ms 0 20 40 60 80 100 120 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) i d (a), peak avalanche current t a =25c t a =150 t a =100 t a =125 alpha & omega semiconductor, ltd. www.aosmd.com
AO4498 typical electrical and thermal characteristics 40 q 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note f) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =40c/w alpha & omega semiconductor, ltd. www.aosmd.com
AO4498 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off alpha & omega semiconductor, ltd. www.aosmd.com
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